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Product Details:
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| Application: | High Power Device Optoelectronic Device GaN Epitaxy Device Light Emitting Diode | Diameter: | Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6" |
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| Thickness: | 330 Um ~ 350 Um | Grade: | Production Grade / Research Grade |
SIC Wafer
Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .
SiC Wafer Application
| High frequency device | High temperature device |
| High power device | Optoelectronic device |
| GaN epitaxy device | Light emitting diode |
SiC Wafer Properties
| Polytype | 6H-SiC | 4H-SiC |
| Crystal stacking sequence | ABCABC | ABCB |
| Lattice parameter | a=3.073A , c=15.117A | a=3.076A , c=10.053A |
| Band-gap | 3.02 eV | 3.27 eV |
| Dielectric constant | 9.66 | 9.6 |
| Refraction Index | n0 =2.707 , ne =2.755 | n0 =2.719 ne =2.777 |
Product Specification
| Polytype | 4H / 6H |
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| Diameter | Ø 2" / Ø 3" / Ø 4" |
| Thickness | 330 um ~ 350 um |
| Orientation | On axis <0001> / Off axis <0001> off 4° |
| Conductivity | N - type / Semi-insulating |
| Dopant | N2 ( Nitrogen ) / V ( Vanadium ) |
| Resistivity ( 4H-N ) | 0.015 ~ 0.03 ohm-cm |
| Resistivity ( 6H-N ) | 0.02 ~ 0.1 ohm-cm |
| Resistivity ( SI ) | > 1E5 ohm-cm |
| Surface | CMP polished |
| TTV | <= 15 um |
| Bow / Warp | <= 25 um |
| Grade | Production grade / Research grade |
Contact Person: Daniel
Tel: 18003718225
