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Product Details:
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| Features: | High Hardness; High Corrosion Resistance; Low Density; Stability In A Wide Range Of Temperatures; Precision Machining Capability. | Material: | Silicon Nitride Si3N4 |
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| Size: | Customized | Color: | Black |
| High Light: | Silicon Nitride Riser Tube,Silicon Nitride Si3N4,Si3N4 Riser Tube |
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Advantages:
Due to the high density with low porosity, high temperature stability,excellent resistance to thermal shock and excellent corrosion resistance,silicon nitride material has a very broad application prospects in the cast aluminum industry on equipment parts.Currently,Our company has developed andproduced series of high performance silicon nitride ceramic products for cast aluminum industry using,including silicon nitride riser tube,silicon nitride heater protection tube,rotating shaft,rotor and silicon nitride protection tube for thermocouple,etc..
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
| Physical Property |
Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
| Mechanical Property |
Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
| Thermal Property |
Maximum working temperature |
°C | 1500 | 1600 | 1300 | 1400 |
| thermal expansion coefficient 0-1000°C |
/°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
| 300°C) | 16 | 100 | 3 | 25 | ||
| Electrical Property |
Resisting rate of Volume | ◎.cm | ||||
| 20°C | >1012 | 106-108 | >1010 | >1011 | ||
| 100°C | 1012-1013 | – | – | >1011 | ||
| 300°C | >1012 | – | – | >1011 | ||
| Insulation Breakdown Intensity |
KV/mm | 18 | semiconductor | 9 | 17.7 | |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – | |
Contact Person: Daniel
Tel: 18003718225
