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2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

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2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer
2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer 2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer 2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer 2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

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Product Details:
Place of Origin: CHINA
Brand Name: ZG
Certification: CE
Model Number: MS
Payment & Shipping Terms:
Minimum Order Quantity: 1 piece
Price: USD10/piece
Packaging Details: Strong wooden box for Global shipping
Delivery Time: 3 working days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month

2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

Description
Application: Integrated Circuits , Detector / Sensor Device , MEMS Fabrication, Opto-electronic Components, And Solar Cells Diameter: Ø 4"/ Ø 6" / Ø 8"
Device Thickness: 2 Um ~ 300 Um Coating: Oxide And Nitride Can Be Supplied On Both Sides Of SOI Wafer
Highlight:

SOI Wafer Technical Ceramic Parts

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2um SOI Wafer

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300um SOI Wafer

 

SOI Wafer ( Silicon-on-Insulator )

 

We provides high quality SOI wafer ( Silicon-on-Insulator ) for a varity of application including MEMS , Power device , Pressure sensors and CMOS integrated circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer ( active layer ) on top , a buried oxide layer ( insulating SiO2 layer ) in the middle , and a handle wafer ( bulk silicon ) in the bottom . SOI wafers are produced by using SIMOX and wafer bonding technology to achieve thinner and precise device layer and ensure the requirement of thickness uniformity and low defect density . We can provide SOI wafer in diameter 4" and 8 " with flexible thickness and wide resistivity range to meet your unique SOI requirements . Contact us for further SOI product informations .

 

SOI Wafer Application

 

 

High-speed ICs High-temperature ICs
Low-power ICs Low-voltage ICs
Microwave components Power device
MEMS Semiconductor

 

Product Specification

 
Method Fusion bonding
Diameter Ø 4"/ Ø 6" / Ø 8"
Device thickness 2 um ~ 300 um
Tolerance +/- 0.5 um ~ 2 um
Orientation <100> / <111> / <110> or others
Conductivity P - type / N - type / Intrinsic
Dopant Boron / Phosphorous / Antimony / Arsenic
Resistivity 0.001 ~ 100000 ohm-cm
Oxide thickness 500A ~ 4 um
Tolerance +/- 5%
Handle wafer >= 300 um
Surface Double sides polished
Coating Oxide and nitride can be supplied on both sides of SOI wafer
 

 

2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer 0

Contact Details
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Contact Person: Daniel

Tel: 18003718225

Fax: 86-0371-6572-0196

Send your inquiry directly to us (0 / 3000)