Send Message
Home ProductsTechnical Ceramic Parts

Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

I'm Online Chat Now

Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

Large Image :  Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

Product Details:
Place of Origin: CHINA
Brand Name: ZG
Certification: CE
Model Number: MS
Payment & Shipping Terms:
Minimum Order Quantity: 1 piece
Price: USD10/piece
Packaging Details: Strong wooden box for Global shipping
Delivery Time: 3 working days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month

Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

Description
Application: Making LD , LED , Microwave Circuit And Solar Cell Applications Diameter: Ø 2" / Ø 3" / Ø 4"
Thickness: 350 Um ~ 625 Um Grade: Epi Polished Grade / Mechanical Grade
Highlight:

Polycrystalline GaAs Wafer

,

Single Crystal Gallium Arsenide

,

Gallium Arsenide For LD LED

Single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for making LD , LED , microwave circuit, solar cell

 

We provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) to opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , in diameter range from 2" to 4 ". We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical propertirs and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafers , both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications , please contact us for more product information .

 

 

GaAs Wafer Feature and Application

 

Feature Application field
High electron mobility Light emitting diodes
High frequency Laser diodes
High conversion efficiency Photovoltaic devices
Low power consumption High Electron Mobility Transistor
Direct band gap Heterojunction Bipolar Transistor

 

Product Specification

 
Growth LEC / VGF
Diameter Ø 2" / Ø 3" / Ø 4"
Thickness 350 um ~ 625 um
Orientation <100> / <111> / <110> or others
Conductivity P - type / N - type / Semi-insulating
Dopant Zn / Si / undoped
Surface One side polished or two sides polished
Concentration 1E17 ~ 5E19 cm-3
TTV <= 10 um
Bow / Warp <= 20 um
Grade Epi polished grade / mechanical grade

 

Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit 0

Contact Details
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Contact Person: Daniel

Tel: 18003718225

Fax: 86-0371-6572-0196

Send your inquiry directly to us (0 / 3000)