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Product Details:
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| Application: | Red , Yellow , And Green LED ( Light-emitting Diodes ) | Diameter: | Ø 2" / Ø 3" |
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| Thickness: | 500 Um ~ 625 Um | Grade: | Epi Polished Grade / Mechanical Grade |
| Highlight: | InAs Wafer Indium Arsenide,2 Inch InAs Wafer,2 Inch Indium Arsenide |
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InAs wafer ( Indium Arsenide )
We provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch . InAs crystal is a compound formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " InAs products with wide choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more product information .
III-V Compound Wafer
We provides a wide range of compound wafer including GaAs wafer, GaP wafer, GaSb wafer, InAs wafer, and InP wafer .
Electrical and Doping Specification
Product Specification
| Growth | LEC |
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| Diameter | Ø 2" / Ø 3" |
| Thickness | 500 um ~ 625 um |
| Orientation | <100> / <111> / <110> or others |
| Off orientation | Off 2° to 10° |
| Surface | One side polished or two sides polished |
| Flat options | EJ or SEMI. Std . |
| TTV | <= 10 um |
| EPD | <= 15000 cm-2 |
| Grade | Epi polished grade / mechanical grade |
| Package | Single wafer container |
Contact Person: Daniel
Tel: 18003718225
Fax: 86-0371-6572-0196
