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Mechanical Grade Technical Ceramic Parts InP Wafer Indium Phosphide

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Mechanical Grade Technical Ceramic Parts InP Wafer Indium Phosphide

Mechanical Grade Technical Ceramic Parts InP Wafer Indium Phosphide
Mechanical Grade Technical Ceramic Parts InP Wafer Indium Phosphide Mechanical Grade Technical Ceramic Parts InP Wafer Indium Phosphide

Large Image :  Mechanical Grade Technical Ceramic Parts InP Wafer Indium Phosphide

Product Details:
Place of Origin: CHINA
Brand Name: ZG
Certification: CE
Model Number: MS
Payment & Shipping Terms:
Minimum Order Quantity: 1 piece
Price: USD10/piece
Packaging Details: Strong wooden box for Global shipping
Delivery Time: 3 working days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month

Mechanical Grade Technical Ceramic Parts InP Wafer Indium Phosphide

Description
Application: Red , Yellow , And Green LED ( Light-emitting Diodes ) Diameter: Ø 2" / Ø 3"
Thickness: 500 Um ~ 625 Um Grade: Epi Polished Grade / Mechanical Grade
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Technical Ceramic Parts InP Wafer

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Mechanical Grade InP Wafer

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InP Wafer Indium Phosphide

 

InP wafer ( Indium phosphide )

 

We provides high quality single crystal InP wafer ( Indium phosphide ) to micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 3 inch . Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties , compared to silicon wafer and GaAs wafer , InP wafer has higher electron mobility ,higher frequency , low power consumption , higher thermal conductivity and low noise performance . We can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .Please contact us for more product information .

 

III-V Compound Wafer

We provides a wide range of compound wafer including GaAs wafer, GaP wafer, GaSb wafer, InAs wafer, and InP wafer .

 

Electrical and Doping Specification

Product Specification

Growth LEC / VGF
Diameter Ø 2" / Ø 3" / Ø 4"
Thickness 350 um ~ 625 um
Orientation <100> / <111> / <110> or others
Off orientation Off 2° to 10°
Surface One side polished or two sides polished
Flat options EJ or SEMI. Std .
TTV <= 10 um
Bow / Warp <= 20 um
Grade Epi polished grade / mechanical grade
Package Single wafer container

Contact Details
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Contact Person: Daniel

Tel: 18003718225

Fax: 86-0371-6572-0196

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