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Product Details:
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| Application: | Microelectronics , Optoelectronics And RF Microwave | Diameter: | Ø 3" / Ø 4" GaAs Wafer |
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| Thickness: | 500 Um ~ 625 Um | Grade: | Epi Polished Grade / Mechanical Grade |
| Highlight: | 4 Inch Technical Ceramic Parts,InP Based Epi Wafer,3 Inch Epi Wafer |
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InP Based Epi Wafer
We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your InP epi layer structure . Please contact us for more product information or discuss your epi layer structure .
Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs.
| Material Capability | Substrate | Wafer Size |
|---|---|---|
| InP/InP | InP wafer | Up to 4 inch |
| InAlAs/InP | InP waferr | Up to 4 inch |
| InGaAs/InP | InP wafer | Up to 4 inch |
| InGaAsP/InP | InP wafer | Up to 4 inch |
| InGaAs/InGaAsP/InP | InP wafer | Up to 4 inch |
| InP/InAlAs/InP | InP wafer | Up to 4 inch |
Optoelectronic applications:
Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides
Electronic applications:
FETs, HBTs, HEMTs, diodes, Microwave devices.
Epi Layer Structure ( HEMT / HBT )
| Growth | MOCVD |
|---|---|
| Dopant source | P type / Be , N type / Si |
| Cap layer | i-InP layer |
| Active layer | n-InGaAs layer |
| Space layer | i-InGaAsP layer |
| Buffer layer | i-InP layer |
| Substrate | Ø 2" / Ø 3" / Ø 4" InP wafer |
Contact Person: Daniel
Tel: 18003718225
Fax: 86-0371-6572-0196
