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Optoelectronic Device SiC Wafer for Light Emitting Diodes

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Optoelectronic Device SiC Wafer for Light Emitting Diodes

Optoelectronic Device SiC Wafer for Light Emitting Diodes
Optoelectronic Device SiC Wafer for Light Emitting Diodes

Large Image :  Optoelectronic Device SiC Wafer for Light Emitting Diodes

Product Details:
Place of Origin: CHINA
Brand Name: ZG
Certification: CE
Model Number: MS
Payment & Shipping Terms:
Minimum Order Quantity: 1 piece
Price: USD10/piece
Packaging Details: Strong wooden box for Global shipping
Delivery Time: 3 working days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month

Optoelectronic Device SiC Wafer for Light Emitting Diodes

Description
Application: High Power Device Optoelectronic Device GaN Epitaxy Device Light Emitting Diode Diameter: Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6"
Thickness: 330 Um ~ 350 Um Grade: Production Grade / Research Grade
Highlight:

Optoelectronic Device SiC Wafer

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SiC Wafer for Light Emitting Diodes

 

 

SIC Wafer

 

Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

 

SiC Wafer Application

 

High frequency device High temperature device
High power device Optoelectronic device
GaN epitaxy device Light emitting diode

 

SiC Wafer Properties

 
Polytype 6H-SiC 4H-SiC
Crystal stacking sequence ABCABC ABCB
Lattice parameter a=3.073A , c=15.117A a=3.076A , c=10.053A
Band-gap 3.02 eV 3.27 eV
Dielectric constant 9.66 9.6
Refraction Index n0 =2.707 , ne =2.755 n0 =2.719 ne =2.777

Product Specification

 
Polytype 4H / 6H
Diameter Ø 2" / Ø 3" / Ø 4"
Thickness 330 um ~ 350 um
Orientation On axis <0001> / Off axis <0001> off 4°
Conductivity N - type / Semi-insulating
Dopant N2 ( Nitrogen ) / V ( Vanadium )
Resistivity ( 4H-N ) 0.015 ~ 0.03 ohm-cm
Resistivity ( 6H-N ) 0.02 ~ 0.1 ohm-cm
Resistivity ( SI ) > 1E5 ohm-cm
Surface CMP polished
TTV <= 15 um
Bow / Warp <= 25 um
Grade Production grade / Research grade

 

Contact Details
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Contact Person: Daniel

Tel: 18003718225

Fax: 86-0371-6572-0196

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