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                        Product Details:
                                                     
 
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| Application: | Power Device , LED , Sensor And Detector | Diameter: | Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6" | 
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| Thickness: | 330 Um ~ 350 Um | Grade: | Production Grade / Research Grade | 
| Highlight: | 350um ZnO Wafer,CdS CdSe ZnO Wafer,350um ZnTe Wafer | ||
ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer
We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and detector applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate for using as GaN epitaxial growth and wide band gap semiconductor application . ZnO wafer are supplied in square shape , undoped , size 10 x 10 x 0.5 mm , double sides polished surface finish and oriented , our high quality ZnO wafer have been widely used for the growth of
nitride base devices . Please contact us for more product information .
ZnO Wafer Application
| GaN epitaxial growth | UV detectors | 
| Power devices | Light-emitting devices | 
| Photovoltaic | Sensors | 
ZnO Wafer Properties
| Chemical formula | ZnO | 
| Crystal structure | Hexagonal | 
| Lattice constant | 3.3 A | 
| Lattice mismatch with GaN in <0001> plane | 9 | 
| Thermal conductivity | 0.006 cal / cm /K | 
| Refractive index | 2.0681 / 2.0510 | 
| Identified polished face | Zn - face / O - face | 
Product Specification
| Growth | Hydrothermal | 
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| ZnO bulk / block | 26.5 x 26.5 x 10 mm | 
| ZnO wafer | 10 x 10 x 0.5 mm | 
| Orientation | Zn face <0001> / O face <000-1> | 
| Resistivity | 500 - 1000 ohm-cm | 
| Surface | two sides polished | 
| Roughness | Ra <= 10 A | 
| Package | Membrance box | 
Contact Person: Daniel
Tel: 18003718225
Fax: 86-0371-6572-0196