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Product Details:
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| Application: | Power Device , LED , Sensor And Detector | Diameter: | Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6" |
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| Thickness: | 330 Um ~ 350 Um | Grade: | Production Grade / Research Grade |
| Highlight: | 350um ZnO Wafer,CdS CdSe ZnO Wafer,350um ZnTe Wafer |
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ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer
We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and detector applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate for using as GaN epitaxial growth and wide band gap semiconductor application . ZnO wafer are supplied in square shape , undoped , size 10 x 10 x 0.5 mm , double sides polished surface finish and oriented , our high quality ZnO wafer have been widely used for the growth of
nitride base devices . Please contact us for more product information .
ZnO Wafer Application
| GaN epitaxial growth | UV detectors |
| Power devices | Light-emitting devices |
| Photovoltaic | Sensors |
ZnO Wafer Properties
| Chemical formula | ZnO |
| Crystal structure | Hexagonal |
| Lattice constant | 3.3 A |
| Lattice mismatch with GaN in <0001> plane | 9 |
| Thermal conductivity | 0.006 cal / cm /K |
| Refractive index | 2.0681 / 2.0510 |
| Identified polished face | Zn - face / O - face |
Product Specification
| Growth | Hydrothermal |
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| ZnO bulk / block | 26.5 x 26.5 x 10 mm |
| ZnO wafer | 10 x 10 x 0.5 mm |
| Orientation | Zn face <0001> / O face <000-1> |
| Resistivity | 500 - 1000 ohm-cm |
| Surface | two sides polished |
| Roughness | Ra <= 10 A |
| Package | Membrance box |
Contact Person: Daniel
Tel: 18003718225
Fax: 86-0371-6572-0196
