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Product Details:
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| Application: | High Tc Superconductor Microelectronics Device Optoelectronics Device Microwave Device | Diameter: | Ø 1" / Ø 2" |
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| Thickness: | 0.5 Mm / 1 Mm | Grade: | Production Grade / Research Grade |
| Highlight: | Arc Melting MgO Wafer,MgO Wafer For Ferroelectric,MgO Wafer for Superconductor |
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MgO wafer produced by arc melting method for making ferroelectric thin film , high Tc superconductor
We provides high quality single crystal MgO wafer produced by arc melting method for making ferroelectric thin film , high Tc superconductor as well as for optoelectronics applications in maximum diameter up to 2 inch . MgO wafer can be fabricated in round or square shape , with a SEMI flat or without flat , one side polished or two sides polished , size from 10 x10 mm to 2 " , thickness range from 0.4 , 0.5 , 1 to 2 mm , surface are epi polished with low surface roughness . We have twin free and defect free MgO substrate with various orientation <100> , <110> and <111> , and high precision surface finish , please contact us for more product information .
MgO Wafer Application
| High Tc Superconductor | Microelectronics device |
| Optoelectronics device | Microwave device |
MgO Wafer Properties
| Chemical formula | MgO |
| Crystal structure | Cubic |
| Lattice constant | 4.212 A |
| Dielectric constant | 9.8 |
| Thermal expansion | 12.8 |
| Density | 3.58 |
Product Specification
| Growth | Arc Fusion |
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| Diameter | Ø 1" / Ø 2" |
| Size | 10 x 10 / 20 x 20 / 30 x 30 / 40 x 40 mm |
| Thickness | 0.5 mm / 1 mm |
| Orientation | <100> / <110> / <111> |
| Surface | one side polished / two sides polished |
| TTV | <= 10 um |
| Roughness | Ra <= 10 A |
| Package | Single wafer container |
Contact Person: Daniel
Tel: 18003718225
Fax: 86-0371-6572-0196
