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Product Details:
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Highlight: | Advanced Silicon Carbide Ceramics,Industrial Silicon Carbide Ceramics,Industrial Ceramics Silicon Carbide |
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Silicon Carbide Ceramics Advanced Industrial Ceramics
Silicon carbide behaves almost like a diamond. It is not only the lightest, but also the hardest ceramic material and has excellent thermal conductivity, low thermal expansion and is very resistant to acids and lyes.
Materials properties:
Manufacturing processes:
Basic properties of the material:
Properties | Brand of material | ||
SCR-Si1 | SCR-Si2-HP | SCR-SSCR-S | |
Composition | SiC+Si | SiC+Si+C | SiC |
Density, g/sm3 | 3,05-3,07 | 3,00-3,05 | 3,10-3,15 |
Isolated porosity, % | 0 | 0 | 2 |
Hardness (at SiC), GPa | 25-30 | 25-30 | 25-30 |
Flexural strength, MPa | 320-350 | 270-300 | 380-410 |
Compressive strength, MPa | 3300-3500 | 2800-3100 | 3000-3500 |
Thermal conductivity at 20-100°С, W/mK | 110-120 | 100-130 | 100-110 |
Coefficient of linear thermal expansion at 20-1000°С, 10-6 К-1 |
3,4-4,9 | 3,5-5,0 | 3,0-4,6 |
Maximum operating temperature Oxidative environment A reducing or inert environment |
1350 1350 |
1350 1350 |
1350 1350 |
The main applications are:
bearings for pumps and compressors;
rings of mechanical seals;
ceramic plungers;
elements of valves and stop valves;
lining for protection from wear and corrosion;
sorting wheels of various grinding machinery;
lining for cyclones and calciners for cement plants;
nozzles;
crucibles, boats;
burners;
furniture and lining of furnaces;
substrates, plates;
products for the metallurgical industry.
Sintered Silicon Carbide Related Data:
Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
Physical Property |
Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
Mechanical Property |
Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
Thermal Property |
Maximum working temperature |
°C | 1500 | 1600 | 1300 | 1400 |
thermal expansion coefficient 0-1000°C |
/°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
300°C) | 16 | 100 | 3 | 25 | ||
Electrical Property |
Resisting rate of Volume | ◎.cm | ||||
20°C | >1012 | 106-108 | >1010 | >1011 | ||
100°C | 1012-1013 | – | – | >1011 | ||
300°C | >1012 | – | – | >1011 | ||
Insulation Breakdown Intensity |
KV/mm | 18 | semiconductor | 9 | 17.7 | |
Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – |
Features:
Product info & Technical Data:
reactively bonded silicon carbide (SCR-Si1, SCR-Si2) There is free silicon in the composition of the material. This material is cheaper, but not recommended for alkali applications.
sintered silicon carbide (SCR-S) Pure silicon carbide. More expensive, but versatile. Recommended for all environments.
Contact Person: Daniel
Tel: 18003718225
Fax: 86-0371-6572-0196