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Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry

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Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry

Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry
Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry

Large Image :  Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry

Product Details:
Place of Origin: China
Brand Name: ZG
Certification: CE
Model Number: MS
Payment & Shipping Terms:
Minimum Order Quantity: 1 PC
Price: 10USD/PC
Packaging Details: Strong wooden box for Global shipping
Delivery Time: 7 work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 1000 PCS

Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry

Description
Highlight:

Wafer Holder Silicon Carbide Trays

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Led Industry Silicon Carbide Trays

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Icp Etching Silicon Carbide Trays

Silicon Carbide (sic) Trays, As A Wafer Holder For Icp Etching Process In Led Industry

 

Silicon carbide (SiC) is a has excellent thermal conductivity, corrosion resistance, and with low thermal expansion. Silicon carbide is an excellent material for sealing rings and bearings. Silicon carbide trays have excellent corrosion resistance, great wear resistance, great mechanical strength under high temperatures. We supply many sizes of silicon carbide trays as well as other SiC products.

 

Materials properties:

Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry 0

Manufacturing processes:

Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry 1

 

Silicon Carbide Trays Properties

Compound Formula SiC
Molecular Weight 40.1
Appearance Black
Melting Point 2,730° C (4,946° F) (decomposes)
Density 3.0 to 3.2 g/cm3
Electrical Resistivity 1 to 4 10x Ω-m
Poisson’s Ratio 0.15 to 0.21
Specific Heat 670 to 1180 J/kg-K


Silicon Carbide Tray Specifications

Type Recrystallized SiC Sintered SiC Reaction Bonded SiC
Purity of Silicon Carbide 99.5% 98% >88%
Max. Working Temp. (`C) 1650 1550 1300
Bulk Density (g/cm3) 2.7 3.1 >3
Appearance Porosity <15% 2.5 0.1
Flexural strength (MPa) 110 400 380
Compressive strength (MPa) >300 2200 2100
Thermal expansion (10^-6/`C) 4.6 (1200`C) 4.0 (<500`C) 4.4 (<500`C)
Thermal conductivity (W/m.K) 35~36 110 65
Main characteristics High temp. High resistance.
High purity
Fracture Toughness Chemical Resistance


Feature requirement:

  1. Excellent thermal conductivity
  2. Resistant to plasma shock
  3. Good temperature uniformity


Silicon Carbide Tray Applications

-Silicon carbide can be applied in areas such as semiconductor and coating.
-Our silicon carbide trays are widely used in LED industry.

Packing of Silicon Carbide

Our Silicon Carbide Trays are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.

 

Quality Control:

Silicon Carbide Sic Trays As Wafer Holder For Icp Etching Process In Led Industry 2

 

Contact Details
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Contact Person: Daniel

Tel: 18003718225

Fax: 86-0371-6572-0196

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