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Aluminum Nitride Substrate

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Aluminum Nitride Substrate

Aluminum Nitride Substrate
Aluminum Nitride Substrate Aluminum Nitride Substrate Aluminum Nitride Substrate

Large Image :  Aluminum Nitride Substrate

Product Details:
Place of Origin: China
Brand Name: ZG
Certification: CE
Model Number: MS
Payment & Shipping Terms:
Minimum Order Quantity: 1 PC
Price: 10USD/PC
Packaging Details: Strong wooden box for Global shipping
Delivery Time: 5-8 work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union,
Supply Ability: 1000 PCS

Aluminum Nitride Substrate

Description
Highlight:

Aluminum Nitride ceramic substrate

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Aluminum Nitride thermal conductive substrate

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Alumina ceramic parts with high durability

Aluminum Nitride Substrate

 

Product Advantages:
1. Standard thermal conductivity 175W/m·K, high thermal conductivity 200W/m·K, ultra-high thermal conductivity 230W/m·K.
2. Customization services available, capable of producing substrates such as milled type, ready-to-burn type, high bending resistance, high thermal conductivity, polished type, and laser-marked type.
3. Suitable for various metallization: DPC, DBC, TPC, AMB, thick film printing, thin film printing, etc.
4. Minimum thickness can reach 0.1mm.

 

Features: It has high mechanical strength, high heat resistance, and low cost.

Dimensions: The standard size of the sintered aluminum nitride substrate is 120mm x 120mm x 1mm, and it can also be customized according to customer requirements.

Applications: High-temperature tools, molten metal containers, solar cells, and other fields.

 

Item Unit NC-170 NC-200 NC-230
Color - Gray/Beige Gray/Beige Gray/Beige
Thermal conductivity [@20°℃]w/m·k  
≥is greater than or equal to
170
≥is greater than or equal to
195
≥is greater than or equal to
225
Bending Strength MPa >450 >380 >350
Surface Roughness μm <0.5 <0.8 <0.85
Volume Density g/cm²
≥is greater than or equal to
3.3
≥is greater than or equal to
3.3
≥is greater than or equal to
3.3
Warpage %0 <2.5 <2.5 <2.5
Coefficient of Linear Expansion [RT-300℃]10-6mm/℃ 4.6 4.6 4.6
Volume Resistance 20℃
Ω
=1V/A·cm·cm
>10^14 >10^13 >10^13
Dielectric constant [@1MHz] 9.0 8.7 8.5
Dielectric Loss [@1MHz]
4.6*10^-4

4.6*10^-4

4.6*10^-4
Dielectric Strength (KV/mm)
≥is greater than or equal to
15
≥is greater than or equal to
15
≥is greater than or equal to
15

 

Aluminum Nitride Substrate 10

Contact Details
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Contact Person: Daniel

Tel: 18003718225

Fax: 86-0371-6572-0196

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