logo
Home ProductsAlumina Ceramic Parts

Aluminum Nitride Substrate

I'm Online Chat Now

Aluminum Nitride Substrate

Aluminum Nitride Substrate
Aluminum Nitride Substrate Aluminum Nitride Substrate Aluminum Nitride Substrate

Large Image :  Aluminum Nitride Substrate

Product Details:
Place of Origin: China
Brand Name: ZG
Certification: CE
Model Number: MS
Payment & Shipping Terms:
Minimum Order Quantity: 1 PC
Price: 10USD/PC
Packaging Details: Strong wooden box for Global shipping
Delivery Time: 5-8 work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 1000 PCS

Aluminum Nitride Substrate

Description
Highlight:

Aluminum Nitride ceramic substrate

,

Aluminum Nitride thermal conductive substrate

,

Alumina ceramic parts with high durability

Aluminum Nitride Substrate

 

Product Advantages:
1. Standard thermal conductivity 175W/m·K, high thermal conductivity 200W/m·K, ultra-high thermal conductivity 230W/m·K.
2. Customization services available, capable of producing substrates such as milled type, ready-to-burn type, high bending resistance, high thermal conductivity, polished type, and laser-marked type.
3. Suitable for various metallization: DPC, DBC, TPC, AMB, thick film printing, thin film printing, etc.
4. Minimum thickness can reach 0.1mm.

 

Features: It has high mechanical strength, high heat resistance, and low cost.

Dimensions: The standard size of the sintered aluminum nitride substrate is 120mm x 120mm x 1mm, and it can also be customized according to customer requirements.

Applications: High-temperature tools, molten metal containers, solar cells, and other fields.

 

Item Unit NC-170 NC-200 NC-230
Color - Gray/Beige Gray/Beige Gray/Beige
Thermal conductivity [@20°℃]w/m·k  
is greater than or equal to
170
is greater than or equal to
195
is greater than or equal to
225
Bending Strength MPa >450 >380 >350
Surface Roughness μm <0.5 <0.8 <0.85
Volume Density g/cm²
is greater than or equal to
3.3
is greater than or equal to
3.3
is greater than or equal to
3.3
Warpage %0 <2.5 <2.5 <2.5
Coefficient of Linear Expansion [RT-300℃]10-6mm/℃ 4.6 4.6 4.6
Volume Resistance 20℃
Ω
=1V/A·cm·cm
>10^14 >10^13 >10^13
Dielectric constant [@1MHz] 9.0 8.7 8.5
Dielectric Loss [@1MHz]
4.6*10^-4

4.6*10^-4

4.6*10^-4
Dielectric Strength (KV/mm)
is greater than or equal to
15
is greater than or equal to
15
is greater than or equal to
15

 

Aluminum Nitride Substrate 10

Contact Details
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Contact Person: Daniel

Tel: 18003718225

Fax: 86-0371-6572-0196

Send your inquiry directly to us (0 / 3000)