Aluminum Nitride Ceramics Parts

Aluminum Nitride Ceramics Parts

Thanks to its electrical insulating properties and excellent thermal conductivity, aluminum nitride (AIN) ceramics are ideal for applications requiring heat dissipation. Furthermore, because it has a coefficient of thermal expansion close to that of silicon and excellent plasma resistance, it is used for components of semiconductor processing equipment.

Aluminum nitride (AIN) ceramics exhibit exceptional characteristics as listed below:

• Good mechanical properties,
• Higher flexural strength than Al2O3 and BeO ceramics,
• High temperature and corrosion resistance.
• High thermal conductivity combined with good electrical insulating properties.
• Exceptional stability when exposed to large amounts of molten salts.
• Thermal stability not less than 1500°C.
• Favourable mechanical properties extending over the high temperature range.
• Low thermal expansion and resistance to thermal shock.
• Special optical and acoustic characteristics.

Formation of processing:

• Ceramic injection molding
• Low pressure die casting
• Cold isostatic press
• Dry press
• Tape casting
• Precision machining

Aluminum nitride ceramic products:

• AlN ceramic radiators for high-power systems
• AlN crucible, Al evaporation cup and other parts resistant to high-temperature corrosion.
• Direct bonded copper (DBC) substrates
• AlN ceramic rod
• ALN Ceramic Waffle
• ALN ceramic substrate
• AlN ceramic heater
• Custom form

Applications of aluminum nitride ceramic components:

• Components for semiconductor technology
• IC housing
• Thermal module substrate
• High power transistor module substrate
• High frequency device substrate
• Exothermic insulation plate for thyristor modules
• Semiconductor laser, fixed substrate for light-emitting diode (LED)
• Hybrid integrated module, ignition device module
• Used in sintering structural ceramics.
• AlN Crucible for melting metals and electronic cigarettes
• Applies to luminous materials.
• Applied to the substrate material

Aluminum nitride (AlN) has a maximum band gap of 6.2 eV, providing higher photoelectric conversion efficiency than indirect band gap semiconductors. As an important blue and ultraviolet luminescent material, AlN is used in UV/deep UV LEDs, ultraviolet laser diodes, and ultraviolet detectors. Furthermore, AlN can form continuous solid solutions with group III nitride compounds such as GaN and InN, and its tri- or quadratic alloys can provide a continuously tunable band gap from the visible to deep UV range, making it an important high-efficiency luminescent material.

AlN crystals are ideal substrates for GaN, AlGaN, and AlN epitaxial materials. Compared to sapphire or SiC substrates, AlN exhibits superior thermal matching and chemical compatibility with GaN, as well as lower voltage between the substrate and the epitaxial layer. Therefore, an AlN crystal as a GaN epitaxial substrate can significantly reduce device defect density, improve device performance, and has promising applications in high-temperature, high-frequency, and high-power electronic devices.

In addition, the AlGaN epitaxial material substrate with AlN crystal as the high-Al component can effectively reduce the defect density of the nitride epitaxial layer and significantly improve the performance and lifespan of nitride semiconductor devices.

Common specification of ALN ceramic substrate:

Length and width: 25.4 mm; 50.8 mm; 63.5 mm; 76.2 mm; 101.6 mm; 114.3 mm; 127 mm; 152.4 mm.

Thickness: 0.25 mm; 0.5 mm; 0.63 mm; 1 mm; 1.5 mm; 2 mm.