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SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY

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SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY

SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY
SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY

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Product Details:
Place of Origin: CHINA
Brand Name: ZG
Certification: CE
Model Number: MS
Payment & Shipping Terms:
Minimum Order Quantity: 10000 pieces
Price: Negotiation
Packaging Details: Strong wooden box for global shipping
Delivery Time: 5-8 working days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month

SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY

Description
Material: Silicon Carbide Color: Black
Size: Customized Feature: Excellent Thermal Conductivity Resistant To Plasma Shock Good Temperature Uniformity
High Light:

3.2g/Cm3 Density Silicon Carbide Plates

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99.5% SiC Silicon Carbide Ceramics

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88% SiC Trays

 

Silicon Carbide (SiC) Trays or Plate

 

Silicon Carbide (SiC) Trays or plate used as a wafer holder for ICP etching process in LED industry.

Silicon carbide (SiC) is a has excellent thermal conductivity, corrosion resistance, and with low thermal expansion. Silicon carbide is an excellent material for sealing rings and bearings. Silicon carbide trays have excellent corrosion resistance, great wear resistance, great mechanical strength under high temperatures. We supply many sizes of silicon carbide trays as well as other SiC products.
 

Silicon Carbide Trays Properties
 

Compound Formula SiC
Molecular Weight 40.1
Appearance Black
Melting Point 2,730° C (4,946° F) (decomposes)
Density 3.0 to 3.2 g/cm3
Electrical Resistivity 1 to 4 10x Ω-m
Poisson’s Ratio 0.15 to 0.21
Specific Heat 670 to 1180 J/kg-K


Silicon Carbide Tray Specifications
 

Type Recrystallized SiC Sintered SiC Reaction Bonded SiC
Purity of Silicon Carbide 99.5% 98% >88%
Max. Working Temp. (`C) 1650 1550 1300
Bulk Density (g/cm3) 2.7 3.1 >3
Appearance Porosity <15% 2.5 0.1
Flexural strength (MPa) 110 400 380
Compressive strength (MPa) >300 2200 2100
Thermal expansion (10^-6/`C) 4.6 (1200`C) 4.0 (<500`C) 4.4 (<500`C)
Thermal conductivity (W/m.K) 35~36 110 65
Main characteristics High temp. High resistance.
High purity
Fracture Toughness Chemical Resistance


Feature requirement:

  1. Excellent thermal conductivity
  2. Resistant to plasma shock
  3. Good temperature uniformity


Silicon Carbide Tray Applications

-Silicon carbide can be applied in areas such as semiconductor and coating.
-Our silicon carbide trays are widely used in LED industry.

Packing of Silicon Carbide

Our Silicon Carbide Trays are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.

SILICON CARBIDE (SIC) TRAYS OR PLATE, AS A WAFER HOLDER FOR ICP ETCHING PROCESS IN LED INDUSTRY 0
 
 

Contact Details
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Contact Person: Daniel

Tel: 18003718225

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