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SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

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SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER
SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

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Product Details:
Place of Origin: CHINA
Brand Name: ZG
Certification: CE
Model Number: MS
Payment & Shipping Terms:
Minimum Order Quantity: 10000 pieces
Price: Negotiation
Packaging Details: Strong wooden box for global shipping
Delivery Time: 5-8 working days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month

SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

Description
Material: Silicon Carbide Color: Black
Size: Customized Feature: Excellent Thermal Conductivity Resistant To Plasma Shock Good Temperature Uniformity
Highlight:

ODM Silicon Carbide Ceramics

,

Abrasion Resistance Silicon Carbide Ceramics

,

OEM Silicon Carbide Block

 

Silicon Carbide (SiC) Block

 

Silicon Carbide Block Good Thermal Conductivity Good Thermal Shock Resistance Good Abrasion Resistance

Due to our large output capacity and strong molding ability for customization production, our company has exported our products to many international markets. Our products are certified according to requirements of customers.

We continue to innovate, improve, and enhance as well as integrate the resources internally and externally to strengthen the flexibility of our company and the competitiveness of our products, and provide both old and new customers with best service.

 


Application:

  1. Grinding process of semiconductor silicon wafer

  2. Grinding process of LED sapphire wafer

  3. Thinning process of LED wafer


Feature requirements:

  1. Good thermal conductivity

  2. Good thermal shock resistance

  3. Good abrasion resistance

 

Performance UNIT HS-A HS-P HS-XA
Grain Size μm 4-10 4-10 4-10
Density g/cm ≥3.1 3.0-3.1 >3.1
Hardness (Knoop) Kg/mm² 2800 2800 2800
Flexural Strength 4 pt @ RT MPa*m1/2 385 240 420
*10³1b/in² 55 55 55
Compressive Strength @ RT Mpa 3900   3900
*10³1b/in² 560 560
Modulus of Elasticity @ RT Gpa 410 400 410
*10³1b/in² 59 58 59
Weibull Modulus (2 parameter)   8 19 12
Poisson Ratio   0.14 0.14 0.14
Fracture Toughness @ RT Double Torsion & SENB MPa*m1/2 8 8 8
*1³1b/in²in½
Coefficient of Thermal Expansion RT to 700℃ X10-6mm/mmK 4.02 4.2 4.02
X10-6 in/in°F 2.2 2.3 2.2
Maximum Service Temp.Air Mean Specific Heat @ RT °C 1900 1900 1900
J/gmK 0.67 0.59 0.67
Thermal Conductivity @ RT W/mK 125.6 110 125.6
Btu/ft h°F 72.6 64 72.6
@200°C W/mK 102.6   102.6
Btu/ft h°F 59.3 59.3
@400°C W/mK 77.5   77.5
Btu/ft h°F 44.8 44.8
Permeability @ RT to 1000°C 31MPa below No gas leakage
Electrical Resistivity @ RT Ohm-cm 102-106 N/A 102-106
Emissivity   0.9 0.9 0.9

 


Why better than others:

 

  1. Available in various specifications, also provide customized services

  2. Stable quality and fast delivery

  3. SiC block diameter from 120mm to 480mm in stock

  4. Save time of sample loading and unloading process

  5. Acceptable higher thinning rate

Silicon Carbide Block - SiC-Block-B-11 

Contact Details
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Contact Person: Daniel

Tel: 18003718225

Fax: 86-0371-6572-0196

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