Product Details:
|
Material: | Silicon Carbide | Color: | Black |
---|---|---|---|
Size: | Customized | Feature: | Excellent Thermal Conductivity Resistant To Plasma Shock Good Temperature Uniformity |
Highlight: | 2800Kg/mm2 Silicon Carbide Ceramics,10 Grain Silicon Carbide Furnace,4 Grain Silicon Carbide Ceramics |
Silicon Carbide Furnace, SiC Paddle, SiC Tube, SiC boats
We are an export-oriented enterprise which integrates design, development, production and service. Due to low labour costs and highly skilled work force & state of the art production facility, we are able to manufacture high quality products at lowest prices and provide value for money. We sincerely welcome all friends home and abroad to contact us,either by establishing business relationships or to work together to obtain mutual benefits.
Parameters
Performance |
UNIT |
HS-A |
HS-P |
HS-XA |
Grain Size |
μm |
4-10 |
4-10 |
4-10 |
Density |
g/cm |
≥3.1 |
3.0-3.1 |
>3.1 |
Hardness (Knoop) |
Kg/mm² |
2800 |
2800 |
2800 |
Flexural Strength 4 pt @ RT |
MPa*m1/2 |
385 |
240 |
420 |
*10³1b/in² |
55 |
55 |
55 |
|
Compressive Strength @ RT |
Mpa |
3900 |
|
3900 |
*10³1b/in² |
560 |
560 |
||
Modulus of Elasticity @ RT |
Gpa |
410 |
400 |
410 |
*10³1b/in² |
59 |
58 |
59 |
|
Weibull Modulus (2 parameter) |
|
8 |
19 |
12 |
Poisson Ratio |
|
0.14 |
0.14 |
0.14 |
Fracture Toughness @ RT Double Torsion & SENB |
MPa*m1/2 |
8 |
8 |
8 |
*1³1b/in²in½ |
||||
Coefficient of Thermal Expansion RT to 700℃ |
X10-6mm/mmK |
4.02 |
4.2 |
4.02 |
X10-6 in/in°F |
2.2 |
2.3 |
2.2 |
|
Maximum Service Temp.Air Mean Specific Heat @ RT |
°C |
1900 |
1900 |
1900 |
J/gmK |
0.67 |
0.59 |
0.67 |
|
Thermal Conductivity @ RT |
W/mK |
125.6 |
110 |
125.6 |
Btu/ft h°F |
72.6 |
64 |
72.6 |
|
@200°C |
W/mK |
102.6 |
|
102.6 |
Btu/ft h°F |
59.3 |
59.3 |
||
@400°C |
W/mK |
77.5 |
|
77.5 |
Btu/ft h°F |
44.8 |
44.8 |
||
Permeability @ RT to 1000°C |
31MPa below No gas leakage |
|||
Electrical Resistivity @ RT |
Ohm-cm |
102-106 |
N/A |
102-106 |
Emissivity |
|
0.9 |
0.9 |
0.9 |
Pictures
Application:
SiC paddle is used as a wafer boat holder for diffusion process in semiconductor, LED, solar energy industries.
SiC process tube is used in the diffusion furnace equipment in semiconductor, LED, solar energy industries.
SiC boat is used as a wafer holder in boron or phosphorus diffusion process and widely applied in discrete semiconductor industry.
SiC dragon wafer boats are widely used as a wafer holder in high temperature diffusion processes.
Feature requirements:
High temperature chemical stability
Superior high temperature strength
Thermal shock resistance
Corrosion resistance of acid and alkali
Excellent thermal conductivity
Why better than others:
Customized services
Stable quality and fast delivery
Contact Person: Daniel
Tel: 18003718225
Fax: 86-0371-6572-0196