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Product Details:
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| Features: | High Hardness; High Corrosion Resistance; Low Density; Stability In A Wide Range Of Temperatures; Precision Machining Capability. | Material: | Silicon Nitride Si3N4 |
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| Size: | Customized | Color: | Black |
| High Light: | Thermocouple Protection Tube 1800 C,ceramic thermocouple protection tubes 1800 C,Silicon Nitride Thermocouple Protection Tube |
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High-performance silicon nitride ceramic materials developed for the aluminum industry has significantly improved thermal and mechanical properties than similar products. On this basis, the "L-shaped high thermal conductivity submerged heating "Appliance" will bring revolutionary progress to aluminum industrial equipment.
Silicon nitride ceramic is widely used as a thermocouple protection tube. Due to its excellent high-temperature performance, the service life is more than one year.
Advantage:
Silicon nitride ceramics have low wettability to molten aluminum, so on-site maintenance is basically unnecessary.
Compared with cast iron, graphite and other materials, silicon nitride will not be corroded by molten aluminum, thus ensuring the accuracy and sensitivity of the measured temperature;
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
| Physical Property |
Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
| Mechanical Property |
Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
| Thermal Property |
Maximum working temperature |
°C | 1500 | 1600 | 1300 | 1400 |
| thermal expansion coefficient 0-1000°C |
/°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
| 300°C) | 16 | 100 | 3 | 25 | ||
| Electrical Property |
Resisting rate of Volume | ◎.cm | ||||
| 20°C | >1012 | 106-108 | >1010 | >1011 | ||
| 100°C | 1012-1013 | – | – | >1011 | ||
| 300°C | >1012 | – | – | >1011 | ||
| Insulation Breakdown Intensity |
KV/mm | 18 | semiconductor | 9 | 17.7 | |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – | |
Contact Person: Daniel
Tel: 18003718225
