Ceramic Components for the Broader Semiconductor Industry —— High-Purity Material Solutions for Next-Generation Electronics

As semiconductor manufacturing advances toward smaller node sizes and higher power densities, process environments demand materials that can endure extreme heat, reactive plasma chemistry, and strict cleanliness standards. Our Advanced Ceramic Components are specifically engineered to meet the stringent demands of the broader semiconductor ecosystem—from front-end wafer fabrication and processing equipment to back-end packaging and inspection systems.

Material Portfolio

We offer a comprehensive selection of high-performance technical ceramics tailored for specific semiconductor applications:

• Aluminum Nitride ($AlN$): Exceptional thermal conductivity ($170 sim 230 text{W/m}cdottext{K}$) coupled with excellent electrical insulation. Ideal for thermal spreaders, electrostatic chucks, and heater pedestals.

• Silicon Carbide ($SiC$): Extreme hardness, high modulus of elasticity, and superior thermal shock resistance. Used extensively in chemical mechanical planarization (CMP) components, structural rings, and high-temperature diffusion tubes.

• High-Purity Alumina ($Al_2O_3 ge 99.8%$): Excellent dielectric strength, high plasma erosion resistance, and cost-effective performance for chamber liners, focus rings, and electrical insulators.

• Yttria ($Y_2O_3$) & Yttria-Stabilized Zirconia ($YSZ$): Outstanding resistance to harsh fluorine and chlorine plasma corrosion, making them the preferred material for plasma etching chamber components.

Key Advantages

1. Superior Plasma & Chemical Erosion Resistance

High chemical stability ensures minimal degradation when exposed to aggressive etch and deposition gases ($F_2$, $Cl_2$, $NF_3$, $O_2$ plasma), significantly reducing chamber particle contamination and extending component replacement intervals.

2. High Temperature & Thermal Shock Stability

Maintains mechanical integrity, dimensional stability, and low thermal expansion coefficients at temperatures exceeding 1000°C, enabling reliable performance in rapid thermal processing (RTP) and CVD environments.

3. Ultra-Clean & Low Outgassing Properties

Manufactured under strict cleanroom conditions to eliminate metallic impurities and volatile organic compounds (VOCs), ensuring full compatibility with high-vacuum and ultra-clean processing standards.

4. Precision Tolerances & Mirror Surface Finishes

Using multi-axis diamond grinding, ultrasonic machining, and advanced polishing, components are finished to micro-level tolerances ($le pm 0.001 text{mm}$) and mirror-polished surface roughness ($Ra le 0.01 mutext{m}$).

Applications Across the Semiconductor Value Chain