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Product Details:
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| Features: | High Thermal Conductivity; Excellent Electrical Insulation Properties; Strength; Low Coefficient Of Thermal Expansion; Good Metallization Ability. | Material: | Aluminum Nitride (AlN) |
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| Color: | Gray | Density: | 3.3 G/sm3 |
| High Light: | 320 MPa Aluminum Nitride Ceramics,320 MPa aluminum nitride wafer,High Thermal Conductivity Aluminum Nitride |
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Aluminum Nitride (AlN)
Ceramic Material with Very High Thermal Conductivity
Aluminum Nitride (AlN), a covalently-bonded ceramic, is synthesized from the abundant elements aluminum and nitrogen. It does not occur naturally.
AlN is stable in inert atmospheres at temperatures over 2000°C. It exhibits high thermal conductivity but is, uniquely, a strong dielectric. This unusual combination of properties makes AlN a critical advanced material for many future applications in optics, lighting, electronics and renewable energy.
In addition to powder production, we are also capable of producing and supplying sintered AlN products. To meet the growing demand for thermal management, we are developing copper metalized Aluminum Nitride tapes, net-shaped complex 3D structures and composites. Advanced products such as AlN micro-channel reactors and AlN substrates with novel embedded metallic structures are under development.
Specification:
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Properties |
Material Grade |
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AlN |
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Density, g/sm3 |
3,3 |
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Vickers hardness , GPa |
11 |
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Bending strength, MPa |
320 |
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Young modulus , GPa |
320 |
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Thermal conductivity, W/(m·K) |
180 |
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Coefficient of thermal liner expantion, 10-6/ºК |
4,7-5,6 |
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Electrical strength, kV/mm |
16 |
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Volume resistivity, Ohm·m |
>1012 |
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Dielectric capacitivity |
8,9 |
Main properties:
high thermal conductivity;
excellent electrical insulation properties;
strength;
low coefficient of thermal expansion;
good metallization ability.
Main applications:
blanks for ceramic printed circuit boards;
substrates for metallization on thick-film and thin-film technologies;
polished substrates for metallization on thin-film technology;
substrates for LEDs;
substrates for laser diodes;
precision substrates for microwave GIS and microassemblies with a high density holes and indentations for crystals;
multiple cards for sets of resistors, rheostats, fuel level sensors, pressure, etc.;
carriers of schemes of poisonous substances, ionizing radiation, magnetic field sensors etc.;
plates for ionizers and ozonizers of air;
insulating pads for removing heat from electronic components to the cooling radiator;
protectors for elements of piezoelectric transducers;
bases and holders of flat heating elements, crystals of high-power semiconductor devices;
plates for thermoelectric modules (Peltier elements);
screens for radio frequency plasma generators;
crucibles.
Contact Person: Daniel
Tel: 18003718225
