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SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING

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SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING

SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING
SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING

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Product Details:
Place of Origin: CHINA
Brand Name: ZG
Certification: CE
Model Number: MS
Payment & Shipping Terms:
Minimum Order Quantity: 10000 pieces
Price: Negotiation
Packaging Details: Strong wooden box for global shipping
Delivery Time: 5-8 working days
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month

SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING

Description
Material: Silicon Carbide Color: Black
Size: Customized Feature: Excellent Thermal Conductivity Resistant To Plasma Shock Good Temperature Uniformity
High Light:

410Gpa Silicon Carbide Ceramics

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3900Mpa Silicon Carbide Ceramics

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Thermal Shock Resistance Silicon Carbide Crucible

 

Silicon Carbide Crucible

 
Silicon Carbide Crucible Good thermal conductivity Good thermal shock resistance Good abrasion resistance

We are an export-oriented enterprise which integrates design, development, production and service. Due to low labour costs and highly skilled work force & state of the art production facility, we are able to manufacture high quality products at lowest prices and provide value for money. We sincerely welcome all friends home and abroad to contact us,either by establishing business relationships or to work together to obtain mutual benefits. 

 
Performance UNIT HS-A HS-P HS-XA
Grain Size μm 4-10 4-10 4-10
Density g/cm ≥3.1 3.0-3.1 >3.1
Hardness (Knoop) Kg/mm² 2800 2800 2800
Flexural Strength 4 pt @ RT MPa*m1/2 385 240 420
*10³1b/in² 55 55 55
Compressive Strength @ RT Mpa 3900   3900
*10³1b/in² 560 560
Modulus of Elasticity @ RT Gpa 410 400 410
*10³1b/in² 59 58 59
Weibull Modulus (2 parameter)   8 19 12
Poisson Ratio   0.14 0.14 0.14
Fracture Toughness @ RT Double Torsion & SENB MPa*m1/2 8 8 8
*1³1b/in²in½
Coefficient of Thermal Expansion RT to 700℃ X10-6mm/mmK 4.02 4.2 4.02
X10-6 in/in°F 2.2 2.3 2.2
Maximum Service Temp.Air Mean Specific Heat @ RT °C 1900 1900 1900
J/gmK 0.67 0.59 0.67
Thermal Conductivity @ RT W/mK 125.6 110 125.6
Btu/ft h°F 72.6 64 72.6
@200°C W/mK 102.6   102.6
Btu/ft h°F 59.3 59.3
@400°C W/mK 77.5   77.5
Btu/ft h°F 44.8 44.8
Permeability @ RT to 1000°C 31MPa below No gas leakage
Electrical Resistivity @ RT Ohm-cm 102-106 N/A 102-106
Emissivity   0.9 0.9 0.9

 

 

Application:

  • SiC crucibles are commonly used in metallurgy, semiconductor and optoelectronic industries for high temperature melting.


Feature requirements:

  1. High temperature chemical stability
  2. Superior high temperature strength
  3. Thermal shock resistance
  4. Corrosion resistance of acid and alkali
  5. Excellent thermal conductivity


Why better than others:

  1. Customized services
  2. Stable quality and fast delivery

 

 

SILICON CARBIDE CRUCIBLE, METALLURGY, SEMICONDUCTOR AND OPTOELECTRONIC, HIGH TEMPERATURE MELTING 0
 

 

 

Contact Details
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Contact Person: Daniel

Tel: 18003718225

Send your inquiry directly to us (0 / 3000)

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