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Product Details:
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| Features: | High Hardness; High Corrosion Resistance; Low Density; Stability In A Wide Range Of Temperatures; Precision Machining Capability. | Material: | Silicon Nitride Si3N4 |
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| Size: | Customized | Color: | Black |
| Highlight: | Silicon Nitride Heater Protection Tube,Anti Melting Si3N4 Heater Protection Tube,Thermal Shock Resistant Silicon Nitride Tube |
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High-performance silicon nitride ceramic materials developed for the aluminum industry has significantly improved thermal and mechanical properties than similar products. On this basis, the "L-shaped high thermal conductivity submerged heating "Appliance" will bring revolutionary progress to aluminum industrial equipment.
Silicon nitride ceramic has become the material of choice for the outer protection tube of electric heaters and gas heaters due to its excellent high temperature performance.
Due to its good high-temperature strength and high thermal shock resistance, the product can withstand the thermal load of the high-temperature heating element or burner for a long time, and the service life is more than one year;
Advantage:
Compared with the traditional upper radiant heating method, the energy saving efficiency reaches 20%-30%, and the overheating and oxidation of the upper aluminum liquid is effectively avoided.
Silicon nitride ceramics hardly react with the molten aluminum, so it will not pollute the molten aluminum, which is beneficial to maintain the purity of the heated molten aluminum;
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
| Physical Property |
Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
| Mechanical Property |
Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
| Thermal Property |
Maximum working temperature |
°C | 1500 | 1600 | 1300 | 1400 |
| thermal expansion coefficient 0-1000°C |
/°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
| 300°C) | 16 | 100 | 3 | 25 | ||
| Electrical Property |
Resisting rate of Volume | ◎.cm | ||||
| 20°C | >1012 | 106-108 | >1010 | >1011 | ||
| 100°C | 1012-1013 | – | – | >1011 | ||
| 300°C | >1012 | – | – | >1011 | ||
| Insulation Breakdown Intensity |
KV/mm | 18 | semiconductor | 9 | 17.7 | |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – | |
Contact Person: Daniel
Tel: 18003718225
Fax: 86-0371-6572-0196
